HYSTERESIS AND MEMORY PROPERTIES OF PLATINUM-DIFFUSED METAL-OXIDE-SILICON STRUCTURESNASSIBIAN AG; FARAONE L.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 1; PP. 75-76; BIBL. 3 REF.Article

Thermal SiO₂ films on n⁺ polycrystalline silicon: electrical conduction and breakdownFARAONE, L.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 11, pp 1785-1794, issn 0018-9383Article

PLATINUM-INDUCED HYSTERISIS AND NONVOLATILE MEMORY PROPERTIES IN MOS SYSTEMS (PLATMOS)NASSIBIAN AG; FARAONE L.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 9; PP. 1757-1761; BIBL. 12 REF.Article

CAPTURE CROSS SECTION OF GOLD IN SILICONNASSIBIAN AG; FARAONE L.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 5; PP. 451-452; BIBL. 5 REF.Article

SPACE-CHARGE GENERATION PROPERTIES OF GOLD IN MOS STRUCTURESFARAONE L; NASSIBIAN AG; SIMMONS JG et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 9; PP. 5865-5869; BIBL. 20 REF.Article

GOLD TRAPS IN (100) SILICON-SILICON DIOXIDE INTERFACESSIMMONS JG; FARAONE L; NASSIBIAN AG et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 10; PP. 887-892Article

THE DETERMINATION OF INTERFACIAL AND BULK PROPERTIES OF GOLD IN M.O.S. STRUCTURES USING QUASIEQUILIBRIUM AND NON-STEADY-STATE LINEAR VOLTAGE-RAMP TECHNIQUESFARAONE L; NASSIBIAN AG; SIMMONS JG et al.1979; I.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 5; PP. 121-126; BIBL. 20 REF.Article

CHARACTERISTICS OF METAL/TUNNEL-OXIDE/N/P⁺ SILICON SWITCHING DEVICES. I: EFFECTS OF DEVICE GEOMETRY AND FABRICATION PROCESSESDUNCAN KA; TONNER PD; SIMMONS JG et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 941-948; BIBL. 11 REF.Article

INTERPRETATION OF NON-EQUILIBRIUM MEASUREMENTS ON MOS DEVICES USING THE LINEAR VOLTAGE RAMP TECHNIQUEFARAONE L; SIMMONS JG; AGARWAL AK et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 8; PP. 709-716; BIBL. 11 REF.Article

CHARACTERISTICS OF METAL/TUNNEL-OXIDE/N/P SILICON SWITCHING DEVICES. II: TWO-DIMENSIONAL EFFECTS IN OXIDE-ISOLATED STRUCTURESFARAONE L; SIMMONS JG; HSUEH FL et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 5; PP. 335-344; BIBL. 19 REF.Article

Surface roughness and electrical conduction of oxide/polysilicon interfacesFARAONE, L; HARBEKE, G.Journal of the Electrochemical Society. 1986, Vol 133, Num 7, pp 1410-1413, issn 0013-4651Article

The effects of GaN capping layer thickness on two-dimensional electron mobility in GaN/AlGaN/GaN heterostructuresASGARI, A; KALAFI, M; FARAONE, L et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 25, Num 4, pp 431-437, issn 1386-9477, 7 p.Article

Surface leakage current contribution to the dynamic resistance and 1/f noise in mid-wave mercury cadmium telluride infrared photodiodesGOPAL, V; WESTERHOUT, R. J; FARAONE, L et al.Infrared physics & technology. 2008, Vol 51, Num 6, pp 532-536, issn 1350-4495, 5 p.Article

Current status and issues in the surface passivation technology of mercury cadmium telluride infrared detectorsAGNIHOTRI, O. P; MUSCA, C. A; FARAONE, L et al.Semiconductor science and technology. 1998, Vol 13, Num 8, pp 839-845, issn 0268-1242Article

HgCdTe infrared detector technologyFARAONE, L.SPIE proceedings series. 1998, pp 721-728, isbn 0-8194-2756-X, 2VolConference Paper

Ohmic and Schottky contacts on photochemically passivated n-GaAs surfacesPRASAD, K; FARAONE, L; NASSIBIAN, A. G et al.Thin solid films. 1991, Vol 195, Num 1-2, pp L11-L16, issn 0040-6090Article

Interface-state density analysis of thermally and electron-beam-annealed GaAs surfacesPRASAD, K; FARAONE, L; NASSIBIAN, A. G et al.Journal of applied physics. 1991, Vol 69, Num 10, pp 7146-7152, issn 0021-8979, 7 p.Article

Thermal stability of Pd-In ohmic contacts to n-GaAs formed by scanned electron beam and rapid thermal annealingPRASAD, K; FARAONE, L; NASSIBIAN, A. G et al.Electronics Letters. 1991, Vol 27, Num 2, pp 149-151, issn 0013-5194, 3 p.Article

Characterization of thermally oxidized n⁺ polycrystalline siliconFARAONE, L; VIBRONEK, R. D; MCGINN, J. T et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 3, pp 577-583, issn 0018-9383Article

Two-carrier conduction in MOS tunnel-oxides. II. TheorySIMMONS, J. G; HSUEH, F. L; FARAONE, L et al.Solid-state electronics. 1984, Vol 27, Num 12, pp 1131-1139, issn 0038-1101Article

A quasi-two-dimensional charge transport model of AlGaN/ GaN high electron mobility transistors (HEMTs)ASGARI, A; KALAFI, M; FARAONE, L et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 28, Num 4, pp 491-499, issn 1386-9477, 9 p.Article

Investigation of palladium as a barrier to gold diffusion in sintered ohmic contacts to n-GaAsPRASAD, K; FARAONE, L; NASSIBIAN, A. G et al.Semiconductor science and technology. 1989, Vol 4, Num 8, pp 657-662, issn 0268-1242Article

Two-carrier conduction in MOS tunnel oxides. I: Experiments resultsHSUEH, F. L; FARAONE, L; SIMMONS, J. G et al.Solid-state electronics. 1984, Vol 27, Num 6, pp 499-505, issn 0038-1101Article

Thermal stability of ohnic contacts to n-GaAs formed by scanned electron beam processingPRASAD, K; FARAONE, L; NASSIBIAN, A. G et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 4, pp 618-624, issn 0734-211X, 7 p.Article

Annealing studies on Pd/n-GaAs Schottky diodesSHARDA, H; PRASAD, K; FARAONE, L et al.Semiconductor science and technology. 1991, Vol 6, Num 8, pp 765-770, issn 0268-1242, 6 p.Article